vishay bat42 / bat43 document number 85660 rev. 1.3, 11-mar-04 vishay semiconductors www.vishay.com 1 94 9367 schottky diodes features ? for general purpose applications these diodes feature very low turn-on voltage and fast guard ring against excessive voltage, such as electrostatic discharges these diodes are also available in the sod-123 case with the type designations bat42w to bat43w and in designations ll42 to ll43. mechanical data case: do-35 glass case weight: 130 mg packaging codes/options: tr / 10 k per 13 " reel (52 mm tape), 50 k/box tap / 10 k per ammo tape (52 mm tape), 50 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that leads at a distance of 4 mm from case are kept at ambient temperature thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that leads at a distance of 4 mm from case are kept at ambient temperature part ordering code marking remarks bat42 bat42-gs18 or bat42-gs08 - tape and reel bat43 BAT43-GS18 or bat43-gs08 - tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 30 v forward continuous current t amb = 25 c i f 200 1) ma repetitive peak forward current t p < 1 s, < 0.5, t amb = 25 c i frm 500 1) ma surge forward current t p < 10 ms, t amb = 25 c i fsm 4 1) a power dissipation 1) t amb = 65 c p tot 200 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r ja 300 1) c/w junction temperature t j 125 c ambient operating temperature range t amb - 65 to + 125 c storage temperature range t s - 65 to +150 c
www.vishay.com 2 document number 85660 rev. 1.3, 11-mar-04 vishay bat42 / bat43 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit reverse breakdown voltage i r = 100 a (pulsed) v (br)r 30 v leakage current v r = 25 v i r 0.5 a v r = 25 v, t j = 100 c i r 100 a forward voltage i f = 200 ma v f 1v i f = 10 ma bat42 v f 0.4 v i f = 50 ma bat42 v f 0.65 v i f = 2 ma bat43 v f 0.26 0.33 v i f = 15 ma bat43 v f 0.45 v diode capacitance v r = 1 v, f = 1 mhz c tot 7pf reverse recovery time i f = 10 ma, i r = 10 ma, i rr = 1 ma, r l = 100 ? t rr 5ns detection efficiency r l = 15 k ? , c l = 300 pf, f = 45 mhz, v rf = 2 v v 80 % fig. 1 admissible power dissipation vs. ambient temperature 200 18442 t a - ambient t emperature ( c) 250 200 150 100 50 50 100 150 0 0 p - power dissipation ( mw ) tot fig. 2 typical reverse characteristics 18443 1200 1000 800 600 400 200 0 i - forward current ( ma ) f 1000 100 10 1 0.1 0.01 v f - instantaneous forward voltage ( mv ) c 25 c 125 c -40
vishay bat42 / bat43 document number 85660 rev. 1.3, 11-mar-04 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) fig. 3 typical reverse characteristics 1000 100 10 1 0.1 0.01 18444 0 1020304050 v r - reverse voltag e(v) c 125 c 100 c 75 c 50 c 25 i - reverse leakage current ( a ) r 18445 18 16 14 12 10 8 6 4 2 0 0102030405060 v r - reverse voltag e(v) c - diode capacitance ( pf ) d cathode identification ? 2.0 (0.08) max. ? 0.55 (0.02) max. 3.9 (0.15) max. 26 (1.02) min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 26 (1.02) min.
www.vishay.com 4 document number 85660 rev. 1.3, 11-mar-04 vishay bat42 / bat43 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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